Method of integration of nitrogen bearing high K film

Details Method of integration of nitrogen bearing high K film Method of integration of nitrogen bearing high K film

1998-07-28

2000-08-29

Nelms, David

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438287, 438300, 438305, 438308, 438423, 257411, 257640, 257760, H01L 21336

Patent

active

061107840

ABSTRACT:
A transistor and a method of making the same are provided. The transistor includes a substrate that has an upper surface and a gate dielectric layer positioned on the substrate that has a first quantity of nitrogen therein. A gate electrode is positioned on the gate dielectric layer. First and second source/drain regions are positioned in the substrate and laterally separated to define a channel region beneath the gate dielectric layer. The gate dielectric layer may be composed of a high K material with a thin equivalent thickness of oxide, such as TiO.sub.2, Ta.sub.2 O.sub.5, CrO.sub.2 or SrO.sub.2. The nitrogen suppresses later oxide formation which may otherwise increase the equivalent thickness of oxide of the gate dielectric layer. Nitrogen may also be incorporated into the substrate and the gate electrode.

REFERENCES:
patent: 5885877 (1999-03-01), Gardner et al.
patent: 5918133 (1999-06-01), Gardner et al.
patent: 5937303 (1999-08-01), Gardner et al.
patent: 5994749 (1999-11-01), Oda
Stanley Wolf and Richard N. Tauber; Silicon Processing for the VLSI Era, vol. 3-The Submicron MOSFET; pp. 422-438; 1995.
Stanley Wolf and Richard N. Tauber Silicon Processing for the VLSI Era, vol. 3- The Submicron MOSFET pp. 422-438 1995 U.S.

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