Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-02-17
2000-08-29
Tsai, Jey
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438 14, 438398, H01L 218242
Patent
active
061107778
ABSTRACT:
A method of monitoring a process of manufacturing a semiconductor wafer including an area of hemispherical grain polysilicon, the method comprising providing a probe including a liquid conductor; and performing a capacitance-voltage measurement with the probe, using a quasi-static measurement method, to determine capacitance-voltage characteristics at the area of hemispherical grain polysilicon.
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Lowrey Tyler A.
Schuegraf Klaus F.
Thakur Randhir P. S.
Micro)n Technology, Inc.
Tsai Jey
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