Semiconductor fabrication employing a post-implant anneal within

Details Semiconductor fabrication employing a post-implant anneal within Semiconductor fabrication employing a post-implant anneal within

1997-03-21

1999-01-19

Brown, Peter Toby

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438227, 438301, 438305, 438308, H01L 21336

Patent

active

058613358

ABSTRACT:
An integrated circuit is formed with minimal encroachment of lightly doped drain (LDD) implants partially due to barrier atoms incorporated along the migration avenues. Nitrogen is incorporated either during the LDD implant or during an anneal cycle following the LDD implant. Nitrogen helps minimize segregation and diffusion of LDD dopants placed adjacent critical channel and gate dielectric areas. Nitrogen is incorporated within a chamber while under pressure so as to minimize the temperature needed to repair implant damage and activate the LDD dopants. High pressure indoctrination of nitrogen is believed to provide the same amount of lattice repair and activation achieved if anneal temperatures were substantially higher.

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patent: 5284795 (1994-02-01), Gay et al.
patent: 5420056 (1995-05-01), Moslehi
patent: 5580800 (1996-12-01), Zhang et al.

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