Method of manufacture of four transistor SRAM cell layout

Details Method of manufacture of four transistor SRAM cell layout Method of manufacture of four transistor SRAM cell layout

1995-07-26

1997-11-11

Fourson, George R.

Fishing, trapping, and vermin destroying

437 60, 437918, H01L 2170

Patent

active

056863365

ABSTRACT:
In accordance with still another aspect of this invention, a set of cross-coupled inverters provide a bistable flip flop formed on a semiconductor substrate with a pair of FOX regions defining an area on the surface of a substrate. The substrate is composed of a semiconductor material with a pair of buried contact regions in the silicon substrate juxtaposed with the FOX regions. A control gate electrode is formed on a gate oxide layer on the surface of the substrate between the pair of the FOX regions. A source region and drain region are formed in the substrate juxtaposed with the control gate electrode to form a parasitic FET device between the FOX regions, the source region and the drain region and reaching to separate ones of the buried contact regions. An interpolysilicon dielectric layer over the control gate electrode covers the device and the power supply conductor passes over the control gate electrode.

REFERENCES:
patent: 5162259 (1992-11-01), Kolar et al.
patent: 5521113 (1996-05-01), Hsue et al.
patent: 5545584 (1996-08-01), Wuu et al.
patent: 5580806 (1996-12-01), Chang et al.

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