Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Patent
1992-02-20
1993-01-12
Fears, Terrell W.
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
36518904, 365226, 3652335, G11C 1140
Patent
active
051795353
ABSTRACT:
A substrate bias generating circuit improved for a DRAM is disclosed. The substrate bias generating circuit is driven by an externally applied signal /RAS, and a drive pulse signal is divided by a newly provided frequency division circuit. A ratio of division of the frequency division circuit is so set that power consumed by a substrate bias generating circuit is minimized under the requirement that a potential of a substrate of the DRAM should be kept within a permissible range. Therefore, a potential of the semiconductor substrate can be kept within a permissible range under less power consumption.
REFERENCES:
patent: 4494223 (1985-01-01), Reddy et al.
Fears Terrell W.
Mitsubishi Denki & Kabushiki Kaisha
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