Method for chemical planarization (CMP) of a semiconductor wafer

Details Method for chemical planarization (CMP) of a semiconductor wafer Method for chemical planarization (CMP) of a semiconductor wafer

1995-04-28

1996-05-07

Thomas, Tom

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437228, H01L 21306

Patent

active

055142451

ABSTRACT:
A method of chemically-mechanically planarizing (CMP) a dielectric layer formed on semiconductor wafer includes planarizing the dielectric layer with a polishing pad formed of a hard low compressibility pad material, and then polishing the dielectric layer with a polishing pad formed of a soft compressible pad material to remove micro-scratches formed during the planarization step. During the planarization step, the hard low compressibility pad material does not deform into the surface of the dielectric layer and the dielectric layer is planarized along a single contact plane. A loading effect in which the a material compresses and produces an irregular surface is thus eliminated.

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