Method of manufacturing a complementary metal-oxide semiconducto

Details Method of manufacturing a complementary metal-oxide semiconducto Method of manufacturing a complementary metal-oxide semiconducto

1997-06-26

1999-11-23

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438276, 438289, H01L 218238

Patent

active

059899492

ABSTRACT:
Disclosed is a method of manufacturing a complementary metal-oxide semiconductor device. The method includes the steps of: forming a plurality of field oxide layers; forming a screen oxide film on each surface of the first, second, third and fourth active regions; forming a first mask pattern for exposing first and second active regions; forming a N-type well to a selected depth from each surface of the exposed first and second active regions; forming a N-type ion implanted layer right beneath each surface of the first and second active regions; removing the first mask pattern; forming a second mask pattern for exposing the third active region; forming a P-type well to a selected depth from the surface of the exposed third active region; forming a first P-type ion implanted layer right beneath the surface of the third active region; removing the second mask pattern; forming a third mask pattern for exposing first and fourth active regions; forming a second P-type ion implanted layer for controlling a third threshold voltage right beneath each surface of the first and fourth active regions; and forming a gate electrode including a gate oxide film on the first, second, third and fourth active regions.

REFERENCES:
patent: 4472871 (1984-09-01), Green et al.
patent: 5091324 (1992-02-01), Hsu et al.
patent: 5272367 (1993-12-01), Dennison et al.
patent: 5384279 (1995-01-01), Stolmeijer et al.
patent: 5403764 (1995-04-01), Yamamoto et al.
patent: 5407849 (1995-04-01), Khambaty et al.
R. Muller et al, Device Electronics for Integrated Circuits II, pp. 505-512 .

Affiliated with

Also associated with

Rating

Method of manufacturing a complementary metal-oxide semiconducto does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a complementary metal-oxide semiconducto, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a complementary metal-oxide semiconducto will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1221073