Process for forming resist patterns using mixed ketone developer

Details Process for forming resist patterns using mixed ketone developer Process for forming resist patterns using mixed ketone developer

1982-04-13

1984-06-12

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430331, 430270, G03C 524, G03C 1495

Patent

active

044542224

ABSTRACT:
Disclosed is a process for forming resist patterns by coating on a substrate at least one selected from homopolymers of a monomer represented by the formula: ##STR1## and copolymers of said monomer with other vinyl monomers, applying radiation to a desired portion thereof, and thereafter carrying out development treatment with use of a developer, which is characterized in that said developer is composed of one or more of ketones selected from the group consisting of 2-butanone, 2-methyl-3-butanone, 2-pentanone, 3-pentanone and 4-methyl-2-pentanone; or mixture thereof with other ketone and/or alcohol, except for a single use of 2-butanone and a combination of 4-methyl-2-pentanone and alcohol.

REFERENCES:
patent: 3535137 (1970-10-01), Haller et al.
patent: 3770433 (1973-11-01), Bartelt et al.
patent: 3984582 (1976-10-01), Feder et al.
patent: 4125672 (1978-11-01), Kakuchi et al.
patent: 4259407 (1981-03-01), Tada et al.
Tsukasa Tada, "Poly(Trifluoroethyl .beta.-Chloroacrylate) as a Highly Sensitive Positive Electron Resist," Journal of the Electrochemical Society, vol. 126, 1979, pp. 1829-1830.
IBM Technical Disclosure Bulletin, vol. 20, No. 5, Oct. 1977, European Search Report.

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