Method for producing dynamic RAM

Details Method for producing dynamic RAM Method for producing dynamic RAM

1998-06-05

1999-03-30

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438253, H01L 218242

Patent

active

058888624

ABSTRACT:
A contact hole and an opening(accessory mark) is formed in a insulation film. Then, a first polysilicon film is grown by reduced pressure CVD process. After a silicon oxide film which is to form a core of the cylindrical stack is grown by about 1300 nm by a normal pressure CVD process, the core silicon oxide film and the first polysilicon film is patterned. Next, using Chemical Mechanical Polishing process, the whole wafer surface is polished by about 900 nm to form a core oxide film having fully flat surface in a height of about 400 nm from the non-open part of contact. By this process, production of harmful particles at the time of removal of the core oxide film can be prevented. Accordingly, the product yield can be improved.

REFERENCES:
patent: 5352622 (1994-10-01), Chung
patent: 5488011 (1996-01-01), Figura et al.
patent: 5824591 (1998-10-01), Sakoh

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