Method for etching silicon nitride

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Details

156646, 156653, 156657, 1566591, 20419237, 252 791, 437241, B44C 122, C03C 1500, C03C 2506

Patent

active

048571407

ABSTRACT:
A process for etching silicon nitride which utilizes free radicals from a remote plasma generated using a fluorine containing gas; and hydrogen; to produce an etch which is selective to selected materials, for example, silicon and silicon dioxide.

REFERENCES:
patent: 4568410 (1986-02-01), Thornquist
patent: 4615756 (1986-10-01), Tsujii et al.
patent: 4687544 (1987-08-01), Bersin
patent: 4711698 (1987-12-01), Douglas

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