Static information storage and retrieval – Systems using particular element – Flip-flop
Patent
1979-01-02
1981-01-27
Hecker, Stuart N.
Static information storage and retrieval
Systems using particular element
Flip-flop
307279, 357 13, G11C 1140
Patent
active
042479150
ABSTRACT:
A semiconductor memory of the static type employs a pair of cross-coupled driver transistors and a pair of access transistors along with load devices which are punch-through elements resembling short channel MOS transistors without gates. The punch-through elements each have an electrode integral with the drain of one of the driver transistors, and another electrode coupled to a voltage supply. A cell layout of very small size is possible.
REFERENCES:
patent: 4158239 (1979-06-01), Bertin
Baitinger et al., Self-Restoring Six-Device FET Memory Cell, IBM Tech. Discl. Bul., vol. 14, No. 4, 9/71, pp. 1340-1341.
Graham John G.
Hecker Stuart N.
Texas Instruments Incorporated
LandOfFree
Punch-through load devices in high density static memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Punch-through load devices in high density static memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Punch-through load devices in high density static memory cell will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1185124