Method of fabrication of semiconductor fuse with polysilicon pla

Details Method of fabrication of semiconductor fuse with polysilicon pla Method of fabrication of semiconductor fuse with polysilicon pla

1992-08-26

1999-10-05

Tsai, Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438132, H01L 2144

Patent

active

059638257

ABSTRACT:
A fusible link and method for its fabrication. A polysilicon pad is formed on top of an insulating layer and covered with a second insulating layer. A trench is selectively etched into the second insulating layer exposing the top of the polysilicon pad. An fusible aluminum link is then formed over the second insulating layer and trench and conformal therewith. When a programming current is driven through the link, the aluminum melts and is absorbed by the polysilicon pad, thereby preventing the link's growback.

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