Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation
Patent
1997-03-17
1999-10-05
Dang, Trung
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Recessed oxide by localized oxidation
438444, 438445, 438451, H01L 2176
Patent
active
059638206
ABSTRACT:
A method for forming a semiconductor device comprises the steps of forming an oxide over a silicon layer, forming a blanket first nitride layer over the oxide layer and the silicon layer, and etching the first nitride layer and the oxide layer to form a sidewall from at least the oxide layer and the first nitride layer. Next, a second nitride layer is formed over the sidewall and an oxidizable layer is formed over the second nitride layer. The oxidizable and the second nitride layers are etched to form a spacer from the oxidizable layer from and the second nitride layer, and the oxidizable and the silicon layers are oxidized.
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Dang Trung
Micro)n Technology, Inc.
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