Method of forming field isolation in manufacturing a semiconduct

Details Method of forming field isolation in manufacturing a semiconduct Method of forming field isolation in manufacturing a semiconduct

1996-04-10

1998-08-04

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438451, H01L 218238

Patent

active

057892873

ABSTRACT:
This invention discloses a method of manufacturing a semiconductor device, especially a method of forming field isolation, in which a portion of an active region around a field oxide film is highly-doped with the same type impurities as channel-stop impurity ions so that it changes a low-doped channel-stop region which results from a high temperature of field oxidation to a high-doped channel-stop region to prevent field inversion in device operation.

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patent: 4839301 (1989-06-01), Lee
patent: 5138420 (1992-08-01), Komori et al.
patent: 5169792 (1992-12-01), Katoh et al.
patent: 5563091 (1996-10-01), Lee

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