Metalorganic decomposition deposition of thin conductive films o

Details Metalorganic decomposition deposition of thin conductive films o Metalorganic decomposition deposition of thin conductive films o

1998-07-10

2000-04-11

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438627, 438653, H01L 2144

Patent

active

060487909

ABSTRACT:
A method for depositing conductive material inside openings within an integrated circuit uses chemical solution deposition. The method includes applying the integrated circuit having the openings with a metalorganic decomposition precursor. The metalorganic decomposition precursor on the integrated circuit is pyrolyzed in a reducing ambient to form a layer of conductive material. For example, if the reducing ambient includes one of hydrogen gas, or a hydrogen and nitrogen gas mix, reactive hydrogen, or ultra high vacuum substantially devoid of oxygen, a conductive layer of metal forms from pyrolyzing the metalorganic decomposition precursor in such a reducing ambient. If the reducing ambient includes reactive nitrogen, a conductive layer of metal nitride forms from pyrolyzing the metalorganic decomposition precursor in such a reducing ambient. The present invention which uses metalorganic decomposition precursors which are chemical solutions with high wetability may be used to particular advantage for depositing a barrier layer and copper within small geometry openings for metal interconnects.

REFERENCES:
patent: 5866205 (1999-02-01), Vaartstra et al.
patent: 5924012 (1999-07-01), Vaartstra
J.V. Mantese, A.L. Micheli, A. H. Hamdi, and R.W. West, Metalorganic Deposition (MOD): A Nonvacuum Spin-on, Liquid-Based, Thin Film Method, MRS Bulletin, Oct. 1989, pp. 48-53.
B.A. Tuttle and R.W. Schwartz, Solution Deposition of Ferroelectric Thin Films, MRS Bulletin, Jun. 1996, pp. 49-54.
G.T. Kraus, C.S. Oldweiler, and E.P. Giannelis, Synthesis and Oxidation Kinetics of Sol-Gel and Sputtered Tantalum Nitride Thin Films, Mat. Res. Soc. Symp. Proc., vol. 410, 1996, Materials Research Society, pp. 295-300.

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