Method for producing semiconductor device with capacitor stacked

Details Method for producing semiconductor device with capacitor stacked Method for producing semiconductor device with capacitor stacked

1997-02-13

2000-04-11

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438775, H01L 218242

Patent

active

06048764&

ABSTRACT:
In forming a storage node with sidewalls on interlayer dielectric layer of a semiconductor device, the interlayer dielectric layer having an uppermost silicon oxide film, a silicon nitride film is formed as a protective film on the storage node of poly-silicon formed on the interlayer dielectric layer, and thereafter a poly-silicon layer is deposited and then subjected to an anisotropic etching to partially remove the polysilicon layer to remain, as the side walls, portions of the poly-silicon layer on side surfaces of the storage node, with protecting the storage node by the protective film from the etching and without etching the uppermost silicon oxide film. Alternatively, the uppermost silicon oxide film is subjected to a nitrogen plasma treatment before forming the storage node, and a silicon oxide film can be used as the protective film. The storage node with the side walls can be used as a lower electrode of a stack type capacitor in the semiconductor device after removing the protective film.

REFERENCES:
patent: 5578516 (1996-11-01), Chou
patent: 5592024 (1997-01-01), Aoyama et al.
patent: 5629225 (1997-05-01), Iwakiri et al.
patent: 5700709 (1997-12-01), Park et al.
patent: 5759893 (1998-06-01), Wu
H. Mori et al., "Analysis of Isolation Degradation Induced by Interlayer Material in Capacitor Over Bit-Line (COB) DRAM Cell", Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, Yokohama, 1994, pp. 904-906.

Affiliated with

Also associated with

Rating

Method for producing semiconductor device with capacitor stacked does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing semiconductor device with capacitor stacked, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing semiconductor device with capacitor stacked will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1176046