Method of forming a self-aligned refractory metal silicide conta

Details Method of forming a self-aligned refractory metal silicide conta Method of forming a self-aligned refractory metal silicide conta

Filed on

1997-07-25

Date issued

2000-04-11

Examiner

Fahmy, Wael

Patent Class

Semiconductor device manufacturing: process

SubClass

Making field effect device having pair of active regions...

SubSubClass

Having insulated gate

Other Related Categories

438231, 438449, 438664, 438683, H01L 218238

Type

Patent

Status

active

Patent number

060487607

Description

ABSTRACT:
A method of manufacturing a semiconductor device comprising the steps of masking element areas of a silicon substrate of a first conductivity type with a masking layer; forming a field oxide film on field areas of the silicon substrate which are not protected by said masking layer to define separate element areas; introducing first impurities of the first conductivity type into the field oxide film; removing the masking layer and introducing second impurities of a second conductivity type opposite the first conductivity type into the field oxide film and into the element area to form an impurity diffusion layer; forming a refractory metal film over an area extending from the impurity diffusion layer to the field area; and heat treating to form a refractory metal silicide on the surface of the impurity diffusion layer. The first impurities are present in the field oxide film in an amount sufficient to suppress a reaction between the refractory metal layer and the impurity-containing field oxide film in the heat treating step. The inventive method suppresses the formation of a leakage path during silicide processing over the field oxide area and between the diffusion areas of adjacent transistors.

REFERENCES:
patent: 5757045 (1998-05-01), Tsai et al.
patent: 5830790 (1998-11-01), Kim et al.

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