Method of removing a layer of organic matter

Details Method of removing a layer of organic matter Method of removing a layer of organic matter

1990-03-05

1990-12-25

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134 1, 156646, 156651, 156655, 1566591, 156668, 156345, 20419236, B44C 122, B29C 3700, C03C 1500, C03C 2506

Patent

active

049800221

ABSTRACT:
A method removes a first layer of an organic matter which is formed on a second layer, where the first layer is subjected to an ion implantation. The method includes the steps of generating a plasma by exciting a gas which includes H.sub.2 O using a high-frequency energy source, and removing the first layer within the plasma.

REFERENCES:
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 4789427 (1988-12-01), Fujimura et al.
patent: 4861424 (1989-08-01), Fujimura et al.
patent: 4861732 (1989-08-01), Fujimura et al.
"Ashing of Ion-Implanted Resist Layer", Fujimura et al., Japanese Journal of Applied Physics, vol. 28, No. 10, Oct., 1989, pp. 2130-2136.
"Ion Implantation Change in the Chemical Structure of a Resist", Fujimura et al., Nuclear Instruments and Methods in Physics Research, B39, (1989), pp. 809-812.

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