Method of forming high integrity tungsten silicide thin films

Details Method of forming high integrity tungsten silicide thin films Method of forming high integrity tungsten silicide thin films

1997-12-18

2000-08-08

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438655, 438657, 438680, 438674, H01L 2144

Patent

active

061001929

ABSTRACT:
Thin films of tungsten silicide are deposited by CVD on conductive lines under conditions controlled to minimize development of tensile stresses upon subsequent thermal processing, thereby reducing cracking and delamination. Embodiments include reducing the deposition temperature and/or adjusting the gas flow ratio of reactants, such that the as deposited tungsten silicide film does not undergo a significant increase in densification and/or crystallinity upon subsequent deposition of a polycrystalline silicon capping layer.

REFERENCES:
patent: 5618755 (1997-04-01), Ito
patent: 5635765 (1997-06-01), Larson
patent: 5643633 (1997-07-01), Telford et al.
patent: 5795827 (1998-08-01), Liaw et al.
patent: 5963836 (1999-10-01), Kang et al.
patent: 5981387 (1999-11-01), Yeo et al.

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