Method of forming a crown-fin shaped capacitor for a high densit

Details Method of forming a crown-fin shaped capacitor for a high densit Method of forming a crown-fin shaped capacitor for a high densit

1999-03-11

2000-08-08

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438254, H01L 218242

Patent

active

06100135&

ABSTRACT:
The present invention is a method of manufacturing a high density capacitor for use in semiconductor memories. High etching selectivity between BPSG (borophosphosilicate glass) and CVD-oxide (chemical vapor deposition oxide) is used to fabricate a capacitor with a plurality of horizontal fins. First, a nitride layer is formed on a semiconductor substrate. A first conductive layer is then formed on the nitride layer. A stacked layer consists of BPSG and silicon oxide formed on the first conductive layer. Then a contact hole is formed in the stacked layer, the first conductive layer and the nitride layer. A highly selective etching is then used to etch the BPSG sublayers of the stacked layer. Next, a second polysilicon layer is formed in the contact hole and on the stacked layer, subsequently, a dielectric layer is formed on the second polysilicon layer. Then photolithography and etching processes are used to define the storage node. Next a third conductive layer is deposited over the dielectric layer, the stacked layer, and the first conductive layer, subsequently, performing an anisotropic etching to etch the third conductive layer and the second conductive layer. The stacked layer is removed by BOE solution. A dielectric film is then formed along the surface of the first, second, and third conductive layers. Finally, a fourth conductive layer is formed on the dielectric film. Thus, a crown-fin shaped capacitor with higher capacitance is fabricated.

REFERENCES:
patent: 5741722 (1998-04-01), Lee
patent: 5849617 (1998-12-01), Wu

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