Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

1997-05-05

2000-08-08

Smith, Matthew

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438238, 438239, 438254, 438256, 438229, H01L 218234

Patent

active

061001341

ABSTRACT:
A method of fabricating a semiconductor device is disclosed for connecting a bit line to a semiconductor substrate in a self-aligned fashion in non-contacting relation to a word line and precluding a crystal defect in the semiconductor substrate which might induce a leakage current. An isolation insulative film (2), gate oxide films (3), gate electrodes (4) (word lines), and insulative films (5) are formed on a semiconductor (e.g., Si) substrate (1) in sequential order, and sidewalls (6a to 6f) are formed while substrate protective oxide films (6g to 6i) are formed so that the semiconductor substrate (1) is not exposed. Source/drain regions (261 to 263) are formed, and an insulative film (7) made of Si.sub.3 N.sub.4, SiON and the like is deposited. Then, an interlayer insulative film (8) is formed over the top surface. The insulative film (7) has an etching rate lower than that of the interlayer insulative film (8).

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IEEE Cat., No. 87, 1987 Symposium on VLSI Technology--Digest on Technical Papers, pp. 93-94, K. H. Kusters, et al., "A High Density 4MBIT DRAM Process Using a Fully Overlapping Bitline Contact (FoBIC) Trench Cell".

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