Method of manufacturing a semiconductor memory device having a t

Details Method of manufacturing a semiconductor memory device having a t Method of manufacturing a semiconductor memory device having a t

Filed on

1997-04-04

Date issued

2000-08-08

Examiner

Tsai, Jey

Patent Class

Semiconductor device manufacturing: process

SubClass

Making field effect device having pair of active regions...

SubSubClass

Having insulated gate

Other Related Categories

438248, H01L 218242

Type

Patent

Status

active

Patent number

061001309

Description

ABSTRACT:
The invention provides a structure which enables a junction leak current to be reduced without reducing a capacitor area. A trench is formed in the surface of a substrate such that it is connected to a conductive region for a transistor. The structure is characterized by comprising a capacitor electrode formed on the inner peripheral surface of the trench and having its upper edge portion located below the conductive region, an insulating layer projecting inward of the trench at least from the upper edge portion of the capacitor electrode to the conductive region, thereby narrowing the diameter of the trench, a capacitor insulating film coated on the capacitor electrode, and a capacitor electrode filling the trench and contacting the capacitor insulating film.

REFERENCES:
patent: 4792834 (1988-12-01), Uchida
patent: 4794434 (1988-12-01), Pelley, III
patent: 4967248 (1990-10-01), Shimizu
patent: 5309008 (1994-05-01), Watanabe
patent: 5482883 (1996-01-01), Rajeevakumar
Toru Kaga et al; IEEE Transactions on Electron Devices, dated Aug. 8, 1988, vol. 35, No. 8, "Half-V.sub.CC Sheath-Plate Capacitor DRAM Cell with Self-Aligned Buried Plate Wiring" pp. 1257-1263.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor memory device having a t does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor memory device having a t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor memory device having a t will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1149439