Method for making fin-trench structured DRAM capacitor

Details Method for making fin-trench structured DRAM capacitor Method for making fin-trench structured DRAM capacitor

1998-11-09

2000-08-08

Nelms, David

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

437 52, 437 60, 438238, 438240, 438253, 438255, 438397, 438398, H01L 218244

Patent

active

061001295

ABSTRACT:
A method for manufacturing a fin-trench capacitor is disclosed. The method comprises the steps of: forming a plurality of alternating oxide and nitride layers including a top oxide layer, wherein said nitride layers are sandwiched between said oxide layers; forming a storage node contact opening in said plurality of alternating oxide and nitride layers, stopping at said landing pad; removing a portion of said nitride layers along sidewalls of said contract opening; forming a polysilicon layer over said top oxide layer and conformally along said sidewalls of said contact opening; depositing a photoresist layer into said contact opening; removing a portion of said polysilicon layer on top of said top oxide layer; forming a dielectric layer over said top oxide layer and conformally on top of said polysilicon layer along said sidewalls of said contact opening; forming a top conductive layer over said dielectric layer and in said contact opening.

REFERENCES:
patent: 5677221 (1997-10-01), Tseng
patent: 5677222 (1997-10-01), Tseng
patent: 5766995 (1998-06-01), Wu
patent: 5851897 (1998-12-01), Wu
patent: 5913129 (1999-06-01), Wu et al.

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