Method of in-line monitoring for shallow pit on semiconductor su

Details Method of in-line monitoring for shallow pit on semiconductor su Method of in-line monitoring for shallow pit on semiconductor su

1999-03-10

2000-08-08

Picardat, Kevin M.

Semiconductor device manufacturing: process

With measuring or testing

438 16, 438 17, G01R 3126, H01L 2166

Patent

active

061001023

ABSTRACT:
A method of in-line monitoring for shallow pits formed on a semiconductor substrate using an electron beam. The electron beam is scanned across exposed pads on the semiconductor substrate and relative concentrations of secondary electrodes are examined to identify shallow pits.

REFERENCES:
patent: 4912052 (1990-03-01), Miyoshi et al.
patent: 5464779 (1995-11-01), Fujimaki
patent: 5807761 (1998-09-01), Coronel et al.

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