Domed wafer reactor vessel window with reduced stress at atmosph

Details Domed wafer reactor vessel window with reduced stress at atmosph Domed wafer reactor vessel window with reduced stress at atmosph

1997-08-06

2000-08-08

Beck, Shrive

Coating apparatus

Gas or vapor deposition

118724, 118729, 118730, 118733, 392416, 392418, C23C 1600

Patent

active

06099648&

ABSTRACT:
A thermal reactor having a wafer chamber for containing at least one semiconductor wafer during processing. The thermal reactor contains a quartz window having an inward bow defining a concave outside surface.

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patent: 5108792 (1992-04-01), Anderson et al.
patent: 5194401 (1993-03-01), Adams et al.
patent: 5234526 (1993-08-01), Chen et al.
patent: 5587019 (1996-12-01), Fujie
Single Wafer RTP-CVD Epitaxial Deposition Technology, Fred Wong p. 53-54 400 Solid State Technology 32 (1989) Oct., No. 10, Tulsa, OK, US.

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