Multilayer photoresist comprising poly-(vinylbenzoic acid) as a

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

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430271, 430325, 430326, 430313, G03F 736, G03C 558, G03C 193

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active

052601722

ABSTRACT:
The present invention relates to an improved process for forming a multilayer resist image comprising a planarizing layer of poly(vinylbenzoic acid).

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Ito et al., "Sensitive Electron Beam Resist Systems Based on Acid-Catalyzed Deprotection", Proceedings of SPIE--The International Society for Optical Engineering vol. 1086 (1989).
Steinmann et al., "Heat Developable Resist for Multilayer Resist Technology", SPIE vol. 920, Advances in Resist Technology and Processing V (1988).
Ito et al., "Highly Sensitive Thermally Developable Positive Resist Systems", J. Vac. Sci. Technol. B 6(6), Nov./Dec. (1988).
Ito et al., "Thermally Developable, Positive Tone, Oxygen RIE Barrier Resist for Bilayer Lithography", Journal of the Electrochemical Society, vol. 136, No. 1, Jan. (1989).
Ito et al., "Positive/Negative mid UV Resists with High Thermal Stability", SPIE vol. 771, Advances in Resist Technology and Processing IV, (1987).

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