Method of making a semiconductor device having sidewall spacers

Details Method of making a semiconductor device having sidewall spacers Method of making a semiconductor device having sidewall spacers

1997-08-19

1999-08-10

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438585, 438595, 438596, 438791, 438970, 438724, H01L 21336

Patent

active

059373016

ABSTRACT:
A semiconductor device having improved spacers and a process for fabricating the same is provided. The semiconductor device is formed by forming at least one gate electrode over a substrate and forming a spacer layer over the gate electrode. A nitrogen bearing species is implanted into the spacer layer and portions of the spacer layer are removed, using the implanted nitrogen bearing species as a stop point, in order to form spacers on sidewalls of the gate electrode. Removal of the spacer layer may, for example, be performed using a dry or wet etch process.

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