Semiconductor apparatus and fabrication method thereof

Details Semiconductor apparatus and fabrication method thereof Semiconductor apparatus and fabrication method thereof

1997-10-16

1999-08-10

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438303, 438586, M01L 21336

Patent

active

059373008

ABSTRACT:
A polysilicon film is deposited on a semiconductor substrate. A PSG film that can be removed from a material that composes field oxide films and sidewalls of a side surface portion of a gate electrode with a satisfactory selective ratio is deposited on the resultant semiconductor substrate. After the deposited films are processed as a gate electrode, the sidewalls are formed on the side surface portion of the gate electrode. Thereafter, the PSG film is selectively removed and the front surface of the polysilicon film, which composes the gate electrode, is exposed. Tungsten films are deposited on the front surfaces of the polysilicon film and source and drain region formed on the semiconductor substrate. After the SiON film is formed on the resultant semiconductor substrate, contact holes and then contacts are formed on the SiON film.

REFERENCES:
patent: 4890145 (1989-12-01), Malhi
patent: 5352631 (1994-10-01), Sitaram et al.
Wolf et al, "Silicon Processing For The VLSI Era vol. 1: Process Technology", Lattice Press, pp. 187-191, 397-399, 516-519, 532-534, Month Unknown 1986.
C.K. Lau, et al., "Titanium Disilicide Self-Aligned Source/Drain + Gate Technology", International Electron Devices Meeting, 1982, pp. 714-717.

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