Method for making a container capacitor with increased surface a

Details Method for making a container capacitor with increased surface a Method for making a container capacitor with increased surface a

1997-06-27

1999-08-10

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438398, H01L 218242

Patent

active

059372940

ABSTRACT:
A method of forming a polysilicon electrode having at least one roughened surface is performed by roughening a template layer to form a roughened template layer. A layer of polysilicon is next deposited on top of the roughened template layer. The polysilicon electrode is then formed by etching away the roughened template layer, and thereby exposing a roughened surface on the polysilicon electrode.

REFERENCES:
patent: 5438011 (1995-08-01), Blalock et al.
patent: 5556802 (1996-09-01), Bakeman, Jr. et al.

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