Method of fabricating a source/drain with LDD and halo

Details Method of fabricating a source/drain with LDD and halo Method of fabricating a source/drain with LDD and halo

1998-04-09

1999-08-10

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438306, 438527, 257336, 257344, 257408, H01L 21102

Patent

active

059372931

ABSTRACT:
Disclosed are a semiconductor device and a method for fabricating the same which improve short channel effect and increase current driving force. The semiconductor device includes a first conductivity type semiconductor substrate, a gate electrode formed on the semiconductor substrate, a sidewall insulating film formed at both sides of the gate electrode, a second conductivity type first lightly doped impurity region and a second conductivity type second heavily doped impurity region formed in the semiconductor substrate at both sides of the gate electrode, a first conductivity type first impurity region for surrounding the second conductivity type first impurity region, and a first conductivity type second impurity region for surrounding the second conductivity type second impurity region.

REFERENCES:
patent: 5166765 (1992-11-01), Lee et al.
patent: 5449937 (1995-09-01), Arimura et al.
patent: 5719424 (1998-02-01), Ahmad et al.
patent: 5811340 (1998-09-01), Park

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