Single digit line with cell contact interconnect

Details Single digit line with cell contact interconnect Single digit line with cell contact interconnect

1996-07-16

1999-02-02

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257390, 257905, 257906, 257907, 365 69, 365 72, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

058669280

ABSTRACT:
An integrated memory circuit comprises a plurality of memory cells and access transistors; and a digit line comprising conductive tabs extending from at least one side of a conductive digit line. The use of one digit line allows for a reduction in internal noise and coupling between digit line pairs. The use of one digit line also allows for a reduction in array size.

REFERENCES:
patent: 4763178 (1988-08-01), Sakui et al.
patent: 4800525 (1989-01-01), Shah et al.
patent: 5025294 (1991-06-01), Ema
patent: 5107459 (1992-04-01), Chu et al.
patent: 5159415 (1992-10-01), Min
patent: 5698879 (1997-12-01), Aritome et al.

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