Method of oxidation of semiconductor wafers in a rapid thermal p

Details Method of oxidation of semiconductor wafers in a rapid thermal p Method of oxidation of semiconductor wafers in a rapid thermal p

1997-10-17

1999-08-10

King, Roy V.

Coating processes

Coating by vapor, gas, or smoke

Base supplied constituent

4273977, 438773, C23C 1600, H01L 2102

Patent

active

059356502

ABSTRACT:
A method of producing a film on the surface of a semiconductor wafer in an RTP system, comprising: a) rapidly processing the wafer at a first temperature T.sub.1 in an atmosphere containing a substantial vapor pressure of a first reactive gas; then b) rapidly processing the wafer at a second temperature T.sub.2 in an atmosphere substantially free of the first reactive gas is described.

REFERENCES:
patent: 4791071 (1988-12-01), Ang
patent: 5059448 (1991-10-01), Chandra et al.
patent: 5210056 (1993-05-01), Pong et al.
patent: 5498577 (1996-03-01), Fulford, Jr. et al.
patent: 5612249 (1997-03-01), Sun et al.

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