Lift-off technique for producing metal pattern using single phot

Details Lift-off technique for producing metal pattern using single phot Lift-off technique for producing metal pattern using single phot

1985-10-30

1987-08-18

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430313, 430314, 430315, 430326, 430328, G03F 726, H01L 2144, G03C 500

Patent

active

046877304

ABSTRACT:
A process of forming sub-micrometer metallization structures on a substrate is provided. A layer of a photoresist on the structure is pattern irradiated with a reduced dosage of actinic radiation so that, upon development, recesses are formed therein which extend only partially through the photoresist layer. A first layer of metallization is deposited onto the structure at an oblique angle such that it does not completely coat the photoresist in the recesses. The structure is then flood irradiated with actinic light and developed to form openings to the substrate where the photoresist layer is not covered in the recesses. A second layer of metallization is then deposited at normal incidence. The second metallization breaks off and deposits isolated structures on the substrate through the openings. The photoresist layer and overlying layers of metallization are then removed by conventional lift-off technique.

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patent: 4525919 (1985-07-01), Fabian
patent: 4529686 (1985-07-01), Kraus

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