Semiconductor device capacitor having lower electrodes separated

Details Semiconductor device capacitor having lower electrodes separated Semiconductor device capacitor having lower electrodes separated

1997-01-13

1998-08-18

Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257306, 257310, 438 2, 438 3, 438240, 438396, H01L 27108

Patent

active

057961336

ABSTRACT:
In a semiconductor device having a ferroelectric capacitor and manufacturing method thereof, a spacer comprising a low dielectric material is formed on the side surfaces of a plurality of lower electrodes separated into each cell unit, and a ferroelectric film is formed on the lower electrodes whereon the low dielectric material spacer is formed, and an upper electrode is formed on the ferroelectric film, to thereby prevent an error which may be caused between the adjacent lower electrodes.

REFERENCES:
patent: 5198384 (1993-03-01), Dennison
patent: 5206788 (1993-04-01), Larsen et al.
patent: 5439840 (1995-08-01), Jones, Jr. et al.
patent: 5543644 (1996-08-01), Abt et al.

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