Semiconductor memory device having current to voltage conversion

Details Semiconductor memory device having current to voltage conversion Semiconductor memory device having current to voltage conversion

1991-07-12

1995-02-07

Callahan, Timothy P.

Static information storage and retrieval

Read/write circuit

Precharge

365204, 365205, 365208, 36518909, 327 51, 327103, G11C 700

Patent

active

053880781

ABSTRACT:
A semiconductor memory device of the present invention includes a sense amplifier for converting an electrical current flowing through a sense node between a load and a current limiting circuit into an electrical voltage and for outputting the produced electrical voltage. The sense amplifier is constituted by plural stage amplifiers each of which may be shorted across it input and output terminals. The amplifiers are set to the amplifying state, stage by stage, starting at the amplifier closest to the node, for overcoming problems concerned with noise superposition or an output delay caused by bit line overcharging. In a preferred embodiment, MOS transistors for electrical discharging or precharging are provided in the bit line or the sense node for speeding up the operation.

REFERENCES:
patent: 4785424 (1988-11-01), Lin et al.
patent: 5031145 (1991-07-01), Lever
patent: 5160861 (1992-11-01), Lee
patent: 5161123 (1992-11-01), Mochizuki
patent: 5175705 (1992-12-01), Iwahashi
patent: 5187392 (1993-02-01), Allen

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