Semiconductor device having a group of high performance transist

Details Semiconductor device having a group of high performance transist Semiconductor device having a group of high performance transist

1996-12-20

1998-08-18

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438286, H01L 21265

Patent

active

057958076

ABSTRACT:
A semiconductor device may be fabricated using a process in which a group of transistors connected between a high and low voltage sources are formed. The transistor among the group of transistors which is used for connection to the high voltage source has non-symmetrical source and drain regions. The device, exploits low operating voltages to construct new high performance transistors.

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patent: 4753897 (1988-06-01), Lund et al.
patent: 5040035 (1991-08-01), Gabara et al.
patent: 5252505 (1993-10-01), Yatsuda et al.
patent: 5633185 (1997-05-01), Yiu et al.

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