Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1993-11-30
1997-08-19
Chaudhari, Chandra
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
20419217, 438627, 438688, H01L 21441
Patent
active
056588283
ABSTRACT:
A method for forming an aluminum contact through an insulating layer includes the formation of an opening. A barrier layer is formed, if necessary, over the insulating layer and in the opening. A thin refractory metal layer is then formed over the barrier layer, and aluminum deposited over the refractory metal layer. Proper selection of the refractory metal layer and aluminum deposition conditions allows the aluminum to flow into the contact and completely fill it. Preferably, the aluminum is deposited over the refractory metal layer without breaking vacuum.
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Lin Yih-Shung
Liou Fu-Tai
Chaudhari Chandra
Galanthay Theodore E.
Hill Kenneth C.
Jorgenson Lisa K.
SGS-Thomson Microelectronics Inc.
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