Metal oxide stack for flash memory application

Details Metal oxide stack for flash memory application Metal oxide stack for flash memory application

1998-09-16

2000-01-04

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257315, 257317, 257319, 36518511, 438264, 438286, H01L 29788

Patent

active

060112891

ABSTRACT:
In order to alleviate lifting problems and to reduce the height of the stack, a tungsten layer is formed on a interpoly dielectric layer, such as an ONO layer, which separates the conductive control gate from a polysilicon floating gate that is in turn formed on a tunnel oxide layer. The tungsten layer is protected by the provision of a tungsten silicide cap which is formed over the tungsten layer and which therefore prevents oxidation of the metal. The two tungsten based layers are such as to replace the second polysilicon layer which is normally used to form the floating gate.

REFERENCES:
patent: 5095345 (1992-03-01), Gill et al.
patent: 5147820 (1992-09-01), Chittipeddi et al.
patent: 5346842 (1994-09-01), Bergemont
patent: 5350698 (1994-09-01), Huang et al.
patent: 5527727 (1996-06-01), Kim
patent: 5536668 (1996-07-01), An et al.
patent: 5595992 (1997-01-01), Tigelaar et al.
patent: 5607871 (1997-03-01), Han
patent: 5614747 (1997-03-01), Ahn et al.
patent: 5620615 (1997-04-01), Keller
patent: 5620913 (1997-04-01), Lee
patent: 5652161 (1997-07-01), Ahn
patent: 5710454 (1998-01-01), Wu
patent: 5714412 (1998-02-01), Liang et al.
patent: 5862082 (1999-01-01), Dejenfelt et al.
patent: 5907188 (1999-05-01), Nakajima et al.

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