Method for fabricating semiconductor memory element

Details Method for fabricating semiconductor memory element Method for fabricating semiconductor memory element

1995-06-27

1997-08-05

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438397, H01L 2170

Patent

active

056542232

ABSTRACT:
A method for fabricating a semiconductor memory element which has an excellent insulation property suitable for high density integration, including the steps of forming self-aligning plate electrodes by etching a dielectric film covering an upperside protective layer by an amount sufficient to expose each of the dielectric films, forming a third insulation film the entire surface thereof, exposing the upperside protection layer by etching the third insulation film with photosensitive films used as masks, forming a bit line contact by etching the upperside protection layer and the underside protection layer until the impurity region through the bit line contact.

REFERENCES:
patent: 5374577 (1994-12-01), Tuan
patent: 5422295 (1995-06-01), Choi et al.
patent: 5439840 (1995-08-01), Jones, Jr. et al.
patent: 5460999 (1995-10-01), Hong et al.
patent: 5536673 (1996-07-01), Hong et al.
patent: 5567639 (1996-10-01), Chang

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