Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-10-28
2000-01-04
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438 3, 438240, 438653, H01L 218238
Patent
active
060109270
ABSTRACT:
A method for forming CMOS transistors and ferroelectric capacitors on a single substrate (10) with improved yield begins by forming CMOS transistors (37a, 37b, 40, 42). A hydrogen anneal using 4-5% hydrogen and a remainder nitrogen is performed to reduce dangling atomic bonds at the gate dielectric/substrate interface of the transistors (37a, 37b, 40, 42). A silicon nitride layer (48) is then deposited over the transistors and on the backside of the wafer substrate (10) in order to substantially encapsulate the effects of the hydrogen anneal to the CMOS transistors (37a, 37b, 40, 42). Ferroelectric capacitor layers (54, 58, 60, 62, 64) are formed overlying the nitride layer (48) where the ferroelectric capacitor layers (54, 58, 60, 62, 64) are oxygen annealed in pure O.sub.2. The nitride layer (48) prevents the transistor hydrogen anneal from damaging the ferroelectric material by containing the hydrogen.
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Chu Peir-Yung
Jain Ajay
Jones Jr. Robert E.
Zurcher Peter
Motorola Inc.
Nguyen Tuan H.
Witek Keith E.
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