Electron beam exposure utilizing pre-processed mask pattern

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

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G03C 500

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active

060108274

ABSTRACT:
In a method of forming a mask from a design pattern, a mask pattern is repeated in the design pattern and is checked about whether or not the mask pattern has the same line width at a border. If the mask pattern having the same line width is divided, a portion having the same line width adjacent to the border is removed from the mask pattern. The removed mask pattern is actually used as the mask for the electron beam exposure.
As a result, when electron beam exposure is made by the use of the mask, exposed patterns are partially overlapped with each other at adjacent ones of the exposed patterns and contiguous to each other at portions having different line widths. With this structure, the electron beam exposure is performed without registration errors between the exposed patterns contiguous to each other.

REFERENCES:
Y. Nakayama, et al., "Electro-beam cell projection lithography: A new high-throughout electron-beam direct-writing technilogy using a specially tailored Si aperture", J. Vac. Technol. B., vol. 8, No. 6, Nov./Dec. 1990, pp. 1836-1840.

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