Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-06-01
2000-05-09
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257369, 257372, H01L 2976, H01L 2994, H01L 31062, H01L 31113, H01L 31119
Patent
active
060607548
ABSTRACT:
A circuit and method for an improved inverter is provided. The present invention capitalizes on opposing sidewalls and adjacent conductive sidewall members to conserve available surface space on the semiconductor chips. Additionally, the gate and body of the transistors are biased to modify the threshold voltage of the transistor (V.sub.t). The conductive sidewall member configuration conserves surface space and achieves a higher density of surface structures per chip. This design provides fast switching capability for low power battery operated CMOS circuits and systems. The transistor structure offers performance advantages from both metal-oxide semiconductor (MOS) and bipolar junction transistor (BJT) designs. The devices can be used in a variety of applications, digital and analog, wherever a more compact structure with low power consumption and fast response time is needed.
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Forbes Leonard
Noble Wendell P.
Micro)n Technology, Inc.
Ngo Ngan V.
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