Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1998-12-04
2000-05-09
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419222, 20419225, 20419223, 20429807, 20429811, 427304, 438637, 438775, C23C 1434
Patent
active
060599405
ABSTRACT:
Copper or copper alloy interconnection patterns are formed with improved barrier layer protection against copper diffusion. A damascene opening is formed in a dielectric layer and a barrier layer is deposited lining the damascene opening and on the dielectric layer. Embodiments include forming a nitride barrier layer with a plasma generated in a chamber containing a shutter which prevents sputtered atoms from impinging on the dielectric layer. The shutter is then opened to allow a metal layer, e.g., Al, Mg or an alloy thereof, to be sputter deposited on the nitride layer in the chamber. Copper or a copper alloy is then deposited to fill the opening, as by electroplating or electroless plating.
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Steinbruchel, C. Patterning of copper for multilevel metallization: reactive ion etching and chemical-mechanical polishin. Applied Surface Science 91, vol. 91, pp. 139-146, Apr. 4, 1995.
Bai, G. et al. Copper Interconnection Deposition Techniques and Integration. 1996 Symposium on VLSI Technology Digest of Technical Papers, pp. 48-49, 1996.
Brown Dirk
Nogami Takeshi
Advanced Micro Devices , Inc.
Mercado Julian A.
Nguyen Nam
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