Semiconductor memory device capable of driving word lines at hig

Details Semiconductor memory device capable of driving word lines at hig Semiconductor memory device capable of driving word lines at hig

1994-07-26

1996-08-27

Nguyen, Viet Q.

Static information storage and retrieval

Read/write circuit

Bad bit

36523006, 36523008, G11C 700, G11C 1716

Patent

active

055507760

ABSTRACT:
A semiconductor memory device for driving word lines at high speed has a word line signal generating circuit for receiving a predecoded signal of a row address, and power source supply circuit for supplying the output signal of the word line signal generating circuit to a word line as source power. The device includes a normal word line decoder for receiving the predecoded signal and the output signal of the power source supplying circuit, respectively and for selecting a normal word line; a spare word line decoder for receiving the predecoded signal and the output signal of the power source supply circuit, respectively and for selecting a spare word line; and a redundancy enabling circuit connected to the spare word line decoder and the normal word line decoder for determining whether the normal word line is selected.

REFERENCES:
patent: 5168468 (1992-12-01), Magome et al.
patent: 5276360 (1994-01-01), Fujima
patent: 5311472 (1994-05-01), Ota
patent: 5327381 (1994-07-01), Johnson et al.

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