Static information storage and retrieval – Read/write circuit – Precharge
Patent
1988-03-18
1990-04-17
Gossage, Glenn A.
Static information storage and retrieval
Read/write circuit
Precharge
36518908, 365233, 307269, 307480, 328 63, G11C 700, H03K 513
Patent
active
049186574
ABSTRACT:
For producing control signals in a semiconductor memory device, each appearing without an idling time period, a control signal generating circuit comprises a plurality of sequential logical circuits associated with the controlled circuits for supplying the control signals thereto, respectively, and the sequential logical circuits include a first sequential logical circuit responsive to an external control signal and one of the control signals fed from another sequential logic circuit for shifting a logic state thereof between a first logic level and a second logic level, but each of the sequential logic circuits except for the first sequential logic circuit are responsive to the inverse of the external control signal and the output signal fed from one of the controlled circuits for shifting a logic state thereof between the first logic level and the second logic level, so that each of the control signals are produced in the first logic level.
REFERENCES:
patent: 3801827 (1974-04-01), Sequin
patent: 4040122 (1977-08-01), Bodin
patent: 4463440 (1984-07-01), Nishiura et al.
patent: 4570082 (1986-02-01), Maley et al.
patent: 4755964 (1988-07-01), Miner
Gossage Glenn A.
NEC Corporation
LandOfFree
Semiconductor memory device provided with an improved precharge does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device provided with an improved precharge , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device provided with an improved precharge will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1057927