Electron beam-curable resist composition and method for fine pat

Details Electron beam-curable resist composition and method for fine pat Electron beam-curable resist composition and method for fine pat

1991-04-30

1993-01-19

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430325, 430942, G03C 550

Patent

active

051806533

ABSTRACT:
An electron beam-curable resist composition suitable for fine patterning works in the manufacturing process of semiconductor devices is proposed which is outstandingly stable in storage and capable of being developed using an aqueous alkaline developer solution without scums and giving a patterned resist layer with high contrast and orthogonal cross sectional profile of a line pattern. The composition comprises (A) a triazine compound, such as 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, (B) a cresol novolac resin, of which at least 30% by weight of the phenolic moiety is derived from m-cresol, and (C) an alkoxymethylated melamine resin in specified proportions of (B):(C) and (A):[(B)+(C)]. The sensitivity of the resist composition is greatly enhanced by a heat treatment of the resist layer at 90.degree.-140.degree. C. after patternwise irradiation with electron beams.

REFERENCES:
patent: 4189323 (1980-02-01), Buhr
patent: 4581321 (1986-04-01), Stahlhofen
patent: 4801519 (1989-01-01), Koibuchi et al.
patent: 5057397 (1991-10-01), Miyabe et al.

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