4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Incoherent light emitter structure
  6. With particular semiconductor material

Wataru Nakao

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Highly crystalline aluminum nitride multi-layered substrate...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate

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Highly crystalline aluminum nitride multi-layered substrate...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate

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Single crystalline aluminum nitride film, method of forming...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate

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Single crystalline aluminum nitride film, method of forming...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

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Profile ID: LFUS-PAI-P-2761982

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