Highly crystalline aluminum nitride multi-layered substrate...

Details Highly crystalline aluminum nitride multi-layered substrate... Highly crystalline aluminum nitride multi-layered substrate...

2008-03-04

2008-03-04

Gupta, Yogendra N. (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

C117S952000

Reexamination Certificate

active

10937344

ABSTRACT:
A highly crystalline aluminum nitride multi-layered substrate comprising a single-crystal α-alumina substrate, an aluminum oxynitride layer and a highly crystalline aluminum nitride film as the outermost layer which are formed in the mentioned order, wherein the aluminum oxynitride layer has a threading dislocation density of 6.3×107/cm2or less and a crystal orientation expressed by the half-value width of its rocking curve of 4,320 arcsec or less; and a production process thereof.

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