Compound semiconductor epitaxial wafer

Details Compound semiconductor epitaxial wafer Compound semiconductor epitaxial wafer

1996-12-20

1999-06-15

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257101, 438 45, 438 46, H01L 3300

Patent

active

059124768

ABSTRACT:
A compound semiconductor epitaxial wafer added with nitrogen to provide a high luminous efficiency. Epitaxial layers are grown on a single crystalline substrate 4 made of gallium phosphide or gallium arsenide to form a compound semiconductor epitaxial wafer EW. The epitaxial layers include at least an nitrogen-added gallium phosphide arsenide mixed crystalline epitaxial layer having an n-type carrier concentration descending gradually toward the uppermost surface of the grown layer in a continuous or stepwise manner before p-type impurity is diffused, and contain an intermediate layer 83 with an n-type carrier concentration of 4.times.10.sup.14 /cm.sup.3 or more and less than 3.5.times.10.sup.15 /cm.sup.3, and a surface layer 84 having an n-type carrier concentration equals to or lower than that for the intermediate layer 83.

REFERENCES:
patent: 3725249 (1973-04-01), Groves et al.
patent: 4252576 (1981-02-01), Hasegawa et al.
patent: 4354140 (1982-10-01), Nishizawa

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