Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Between different group iv-vi or ii-vi or iii-v compounds...
Reexamination Certificate
2007-08-21
2007-08-21
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Between different group iv-vi or ii-vi or iii-v compounds...
C257S200000, C257SE29094, C257SE29296, C257SE21603
Reexamination Certificate
active
10665524
ABSTRACT:
A thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and a compound thin film with ionic bonding, which is formed on the metal sulfide layer by epitaxial growth. Alternatively, a thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and at least two compound thin films with ionic bonding, which are formed on the metal sulfide layer by epitaxial growth. For example, (1120) surface AlN/MnS/Si (100) thin films formed by successively stacking a MnS layer (about 50 nm thick) and an AlN layer (about 1000 nm thick) on a single crystal Si (100) substrate, are used as a substrate, and a (1120) surface GaN layer (about 100 nm thick) operating as a light emitting layer is formed on the substrate, thereby fabricating a thin film device.
REFERENCES:
patent: 5403673 (1995-04-01), Haga et al.
patent: 6400070 (2002-06-01), Yamada et al.
patent: 6672922 (2004-01-01), Shirakawa et al.
patent: 6888156 (2005-05-01), Chikyow et al.
patent: 2003/0006406 (2003-01-01), Chikyow et al.
patent: 1271626 (2003-01-01), None
patent: 61-111137 (1986-05-01), None
patent: 62-181483 (1987-08-01), None
patent: 362181483 (1987-08-01), None
patent: 3-160735 (1991-07-01), None
patent: 3-160736 (1991-07-01), None
patent: 3-187189 (1991-08-01), None
patent: 8-82612 (1996-03-01), None
patent: 08-264900 (1996-10-01), None
patent: 2002-003297 (2002-01-01), None
patent: 2002-003297 (2002-01-01), None
patent: 2002-075871 (2002-03-01), None
patent: 2004-006562 (2004-01-01), None
Y.Z. Yoo et al., “Fabrication of Epitaxial Wurtzite ZnS Film on Bare Si Substrate,” Proceedings of the 2001 Spring JSAP annual meeting, 29a-K-7, 2001, p. 323.
Yoshinori Konishi et al., “Preparation of Epitaxial Thin Films on Si Substrate With a ZnS Buffer Layer,” Proceedings of the 2002 Spring JSAP annual meeting, 28p-YB-8, 2002, p. 621.
Y.Z. Zoo, et al., “ZnO/ZnS Heteroepitaxy on Si by Laser-MBE,” Proceedings of the 2002 Spring JSAP annual meeting, 28p-ZN-2, 2002, p. 315.
Akito Kuramata et al., “Continuous-Wave Operation 1nGaN Laser Diodes on SiC Substrates,” Oyobuturi, The Japan Society of Applied Physcis, Jul. 10, 1999, pp. 797-800, vol. 68, No. 7.
Seikoh Yoshida, “Electronic Devices Using GaN,” Oyobuturi, The Japan Society of Applied Physics, Jul. 10, 1999, pp. 787-792, vol. 68, No. 7.
Von Robert Juza et al., “Solid Solution in Systems ZnS/MnS, ZnSe/MnSe and ZnTe/MnTe,” Journal of Inorganic and General Chemistry, vol. 285, 1956, pp. 61-69.
A. Miyake et al.,“Luminescent properties of ZnO thin films grown epitaxially on Si substrate”, Journal of Crystal Growth , 214/215, 2000, pp. 294-298.
May 16, 2003 Office Action for U.S. Appl. No. 10/179,006.
U.S. Appl. No. 10/179,006.
Oyo Buturi, vol. 68, p. 790 (1999).
Applied Physics, vol. 68, p. 798, (1999).
Oxide Electronics Report II, Japan Electronics and Information Technology Industries Association, pp. 135 to 141 (1997).
Japanese Journal of Applied Physics, vol. 39 (2000).
Appl. Phys. Lett. 69, 3266 (1996).
National Technical Report, vol. 33, No. 6, p. 687 (1987).
YAHOO! Search—Epitaxial.
Ahmet Parhat
Chikyo Toyohiro
Koinuma Hideomi
Konishi Yoshinori
Song Jeong-Hwan
Mandala Jr. Victor A.
Pert Evan
Sartori Michael A.
Schneller Marina V.
Tokyo Institute of Technology
LandOfFree
Thin film device and its fabrication method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film device and its fabrication method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film device and its fabrication method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3846773